Elia Ambrosi
Elia Ambrosi was born in Verona, Italy, in 1990. He received the B.Sc., M.Sc. and Ph.D. in electronics engineering from Politecnico di Milano, Milan, Italy, in 2013, 2016 and 2020, respectively. During his Ph.D., he worked on the characterization of HfOx and SiOx resistive random access memories (RRAM) and selector devices for dense storage class memory and computing applications.
Olmo Artesani
Olmo Artesani was born in Carate Brianza, Italy, in 1994. He received the B.S. in Engineering Physics from Politecnico di Milano, Milan, Italy in 2016, where he’s pursuing the M.S. in Engineering Physics. He spent the summer semester of his first year of M.S. at Friedrich-Schiller-Universität Jena, Jena, Germany for Erasmus+ exchange program.
Alessandro Bricalli
Alessandro Bricalli received the M.S. and Ph.D. degrees in electrical engineering from Politecnico di Milano, Milan, Italy, in 2015 and 2019, respectively. Currently, he is a Device Engineer at Weebit (Grenoble)
Roberto Carboni
Roberto Carboni was born in Tradate, Italy, in 1991. He received the B.Sc., M.Sc. and Ph.D. (cum laude) in electronics engineering from Politecnico di Milano, Milan, Italy, in 2013, 2016 and 2020, respectively. During his Ph.D he worked on the characterization and modeling of emerging magnetic memories (STT-MRAM, SOT-MRAM) and resistive random access memories (RRAM), for storage class memory and computing applications. His research interests include the fabrication, characterization and modeling of spin orbit torque magnetic memories (SOT-MRAM) for computing applications.
Mario Laudato
Mario Laudato received the M.S. and Ph.D. degrees in electrical engineering from Politecnico di Milano, Milan, Italy, in 2014 and 2018, respectively. Currently, he is a Device Engineer at Intermolecular Inc. (San Jose)
Yu-Hsuan Lin
Yu-Hsuan Lin received the M.S. degree in electronics engineering from National Chiao Tung University in Hsinchu, Taiwan, in 2014, where she is currently pursuing the Ph.D. degree. She was a visiting Ph.D. at the Department of Electronics, Information and Bioengineering (DEIB) of Politecnico di Milano in Professor Daniele Ielmini’s group. Her research interests include the electrical characterization and modeling of non-volatile emerging memories and select devices for neuromorphic computing.
Valerio Milo
Valerio Milo received the B.S., M.S. and Ph.D. (cum laude) in electronics engineering from Politecnico di Milano, Milan, Italy, in 2012, 2015 and 2019, respectively. He was a Post- Doctoral researcher at the Dipartimento di Elettronica, Informazione e Bioingegneria of Politecnico di Milano, Milano, Italy. His current research interests include design, modeling, and simulation of neuromorphic networks with resistive switching random access memory (RRAM) and phase change memory (PCM) for neuromorphic computing applications. He is now a Research Engineer at Applied Materials, Reggio Emilia.
Alessandro Milozzi
Alessandro Milozzi was born in Fermo, Italy, in 1995. He received the B.S. and M. Sc. in Electronics Engineering from Politecnico di Milano (Milan, IT) in 2017 and 2020, respectively. He is now a TCAD engineer at Micron, Vimercate.
Giacomo Pedretti
Giacomo Pedretti was born in Locarno, Switzerland, in 1990. He received the B.Sc., M.Sc. and Ph.D. (cum laude) in electronics engineering from Politecnico di Milano, Milan, Italy, in 2013, 2016 and 2020, respectively. During his Ph.D he worked on the experimental implementation of neuromorphic networks and analog circuits with memristor devices. He spent a summer as a research associate intern at Hewlett Packard Labs, Palo Alto, working on analog content addressable memories with memristors for machine learning accelerators. He is currently a research associate at Hewlett Packard Enterprise.
Caterina Sbandati
Caterina Sbandati was born in Florence, Italy, in 1994. She received the B.S. in Electronics Engineering from “Università degli Studi di Firenze”, Florence, Italy, in 2017 and the M.Sc. in Electronics Engineering from "Politecnico di Milano" in 2020. Currently, she is a Ph.D. student at Southampton University.
Tommaso Stecconi
Tommaso Stecconi was born in Ancona, Italy, in 1993. In 2012, he started his studies at “Politecnico di Milano” in the stream of “Engineering Physics”, and admitted in a Double Degree exchange program at the university “Ecole Centrale Paris” (now “CentraleSupélec”). In 2017 he received the B.S. in “Engineering Physics” and pursued his studies in the M.S. class of “Electronics Engineering”. He graduated in 2019 with a thesis on fabrication and characterization of memristive crossbar arrays for computing applications, in the group of prof. D. Ielmini. He is currently a Ph.D. student at ETH Zurich.
Zhong Sun
Zhong Sun was born in 1989. He received his Doctoral degree in Physics from Tsinghua University (China) in 2016. During the Ph.D. period, he was working on experimental investigation of mechanism and applications of nanoscale NiO memristors. At present, he is working with Professor Ielmini as a postdoc on the project of “Development of memristive devices and circuits for in-memory computing applications”. He was a postdoc research assistant at Department of Electronics, Information and Bioengineering (DEIB) of Politecnico di Milano, working with prof. Daniele Ielmini. His main interests include memristor-based circuit design for Boolean logic and arithmetic applications, and implementation and development of neural network algorithms for brain-inspired computing paradigm. Currently, he is an assistant professor at Peking University (PKU), China.
Elena Vernocchi
Elena Vernocchi was born in Rimini in 1994. She received the B.S. and M.Sc. in Electronics Engineering from Politecnico di Milano (Milan, IT), woking on a thesis under the supervision of Prof. Daniele Ielmini in the electrical characterization of reliability aspects of spin-transfer torque magnetic memory (p-STT-MRAM). Currently, she is a Failure Analysis Engineer at ST Microelectronics, Agrate.
Wei Wang
Wei Wang received his bachelor’s degree in Microelectronics from Nankai University, Tianjin, China, in 2011, and Ph.D. degree in Microelectronics and Solid-State Electronics from Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, in 2016. During his Ph.D. period, he was working on organic and metal-oxide thin film transistors, device fabrications, characteristics and transport mechanisms. He was a research assistant at the Department of Electronics, Information and Bioengineering (DEIB) of Politecnico di Milano in Professor Daniele Ielmini’s group. His current research interests include memristive switching device and neuromorphic computing. He is now a postdoctoral researcher at Technion, Israel.